2SK3365 datasheet(5/8 Pages) NEC

部品番号	2SK3365

部品情報	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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Data Sheet D14255EJ1V0DS00

5

2SK3365

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

0

− 50

10

0

50

100

150

ID = 15 A

30

20

10 V

4.5 V

VGS = 4.0 V

0.8

0

1.2

1.6

VSD - Source to Drain Voltage - V

0.4

Pulsed

VGS = 10 V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

0.1

0.01

1

10

100

0 V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

0.01

0.1

100

1000

10000

1

10

100

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

SWITCHING CHARACTERISTICS

ID - Drain Current - A

1

0.1

10

100

1000

1

10

100

VDD = 15 V

VGS = 10 V

RG = 10

Ω

tr

tf

td(on)

td(off)

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

IF - Diode Current - A

di/dt = 100 A/ s

VGS = 0 V

1

0.1

10

1

10

100

1000

100

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

QG - Gate Charge - nC

0

20

40

10

20

30

40

2

4

6

8

0

VDD = 24 V

15 V

6 V

VDS

12

14

10

ID = 30 A

VGS

10

30

同様の部品番号 - 2SK3365

メーカー	部品番号	データシート	部品情報
Guangdong Kexin Industr...	2SK3365	48Kb / 1P	MOS Field Effect Transistor
VBsemi Electronics Co.,...	2SK3365	959Kb / 8P	N-Channel 30-V (D-S) MOSFET
Inchange Semiconductor ...	2SK3365	399Kb / 2P	isc N-Channel MOSFET Transistor
Renesas Technology Corp	2SK3365	233Kb / 9P	MOS FIELD EFFECT TRANSISTOR 1999
Inchange Semiconductor ...	2SK3365-Z	331Kb / 2P	isc N-Channel MOSFET Transistor

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