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BC807 データシート(PDF) 1 Page - General Semiconductor

部品番号 BC807
部品情報  Small Signal Transistors (PNP)
Download  5 Pages
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メーカー  GE [General Semiconductor]
ホームページ  http://www.vishay.com
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BC807 データシート(HTML) 1 Page - General Semiconductor

  BC807 Datasheet HTML 1Page - General Semiconductor BC807 Datasheet HTML 2Page - General Semiconductor BC807 Datasheet HTML 3Page - General Semiconductor BC807 Datasheet HTML 4Page - General Semiconductor BC807 Datasheet HTML 5Page - General Semiconductor  
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FEATURES
Small Signal Transistors (PNP)
Dimensions in inches and (millimeters)
.016 (0.4)
.037(0.95) .037(0.95)
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
12
Top View
.102 (2.6)
.118 (3.0)
.094 (2.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
BC807, BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier
applications.
Especially suited for automatic insertion
in thick- and thin-film circuits.
These transistors are subdivided into three groups -16,
-25 and -40 according to their current gain.
As complementary types, the NPN transistors BC817
and BC818 are recommended.
Symbol
Value
Unit
Collector-Emitter Voltage
BC807
BC808
–VCES
–VCES
50
30
V
V
Collector-Emitter Voltage
BC807
BC808
–VCEO
–VCEO
45
25
V
V
Emitter-Base Voltage
–VEBO
5V
Collector Current
–IC
500
mA
Peak Collector Current
–ICM
1000
mA
Peak Base Current
–IBM
200
mA
Peak Emitter Current
IEM
1000
mA
Power Dissipation at TSB = 50 °C
Ptot
3101)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
– 65 to +150
°C
1) Device on fiberglass substrate, see layout
Marking code
Type
Marking
BC807-16
-25
-40
BC808-16
-25
-40
5A
5B
5C
5E
5F
5G


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