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SI2306 データシート(PDF) 1 Page - List of Unclassifed Manufacturers |
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SI2306 データシート(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 2 page SOT-23 Plastic-Encapsulate MOSFETS SI2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING: *6** Maximum ratings (at TA=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source voltage VDS 30 Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ=150 ℃) a,b ID 3.16 Pulsed Drain Current IDM 20 Continuous Source Current(Diode Conduction) a,b IS 0.62 A Maximum Power Dissipation a,b PD 0.75 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 ℃ Notes : a. Surface Mounted on 1” ×1” FR4 board, t≤5s. b. Pulse width limited by maximum junction temperature. SOT-23 1. GATE 2. SOURCE 3. DRAIN Thermal Resistance from Junction to Ambient (t≤5s) RθJA 100 ℃/W http://www.makosemi.hk/ |
同様の部品番号 - SI2306 |
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同様の説明 - SI2306 |
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