FDD5810-F085 datasheet(6/7 Pages) FAIRCHILD

部品番号	FDD5810-F085

部品情報	N-Channel Logic Level Trench MOSFET 60V, 36A, 27m

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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FDD5810 Rev. A (W)

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6

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge Waveforms for Constant

Gate Current

Typical Characteristics T

J = 25°C unless otherwise noted

0.2

0.5

0.8

1.1

1.4

-80

-40

0

40

80

120

160

200

VGS = VDS, ID = 250μA

TJ, JUNCTION TEMPERATURE (oC)

0.9

1.0

1.1

1.2

-80

-40

0

40

80

120

160

200

TJ, JUNCTION TEMPERATURE (oC)

ID = 250μA

100

1000

0.1

1

10

60

10000

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

Ciss

Coss

Crss

10

0

2

4

6

8

10

05

10

15

20

25

Qg, GATE CHARGE (nC)

VDD = 30V

ID = 35A

ID = 1A

WAVEFORMS IN

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同様の部品番号 - FDD5810-F085

メーカー	部品番号	データシート	部品情報
ON Semiconductor	FDD5810-F085	350Kb / 8P	N-Channel Logic Level Trench짰MOSFET September-2017,Rev.1

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