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SI4032-B1 データシート(PDF) 7 Page - List of Unclassifed Manufacturers |
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SI4032-B1 データシート(HTML) 7 Page - List of Unclassifed Manufacturers |
7 / 58 page Si4030/31/32-B1 Rev 1.1 7 1. Electrical Specifications Table 1. DC Characteristics1 Parameter Symbol Conditions Min Typ Max Units Supply Voltage Range VDD 1.8 3.0 3.6 V Power Saving Modes IShutdown RC Oscillator, Main Digital Regulator, and Low Power Digital Regulator OFF2 —15 50 nA IStandby Low Power Digital Regulator ON (Register values retained) and Main Digital Regulator, and RC Oscillator OFF — 450 800 nA ISleep RC Oscillator and Low Power Digital Regulator ON (Register values retained) and Main Digital Regulator OFF —1 — µA ISensor-LBD Main Digital Regulator and Low Battery Detector ON, Crystal Oscillator and all other blocks OFF2 —1 — µA ISensor-TS Main Digital Regulator and Temperature Sensor ON, Crystal Oscillator and all other blocks OFF2 —1 — µA IReady Crystal Oscillator and Main Digital Regulator ON, all other blocks OFF. Crystal Oscillator buffer disabled —800 — µA TUNE Mode Current ITune Synthesizer and regulators enabled — 8.5 — mA TX Mode Current —Si4032 ITX_+20 txpow[2:0] = 111 (+20 dBm) Using Silicon Labs’ Reference Design. TX current consumption is dependent on match and board layout. —85 — mA TX Mode Current —Si4030/31 ITX_+13 txpow[2:0] = 111 (+13 dBm) Using Silicon Labs’ Reference Design. TX current consumption is dependent on match and board layout. —30 — mA ITX_+1 txpow[2:0] = 011 (+1 dBm) Using Silicon Labs’ Reference Design. TX current consumption is dependent on match and board layout. —18 — mA Notes: 1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max limits are listed in the "Production Test Conditions" section on page 13. 2. Guaranteed by qualification. Qualification test conditions are listed in the "Production Test Conditions" section on page 13. |
同様の部品番号 - SI4032-B1 |
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同様の説明 - SI4032-B1 |
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