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TC646BEPA データシート(PDF) 3 Page - Microchip Technology |
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TC646BEPA データシート(HTML) 3 Page - Microchip Technology |
3 / 36 page 2003 Microchip Technology Inc. DS21755B-page 3 TC646B/TC648B/TC649B 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Supply Voltage (VDD) .......................................................6.0V Input Voltage, Any Pin................(GND - 0.3V) to (VDD +0.3V) Operating Temperature Range ....................- 40°C to +125°C Maximum Junction Temperature, TJ ...........................+150°C ESD Protection on all pins ........................................... > 3 kV † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo- sure to maximum rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE Name Function VIN Analog Input CF Analog Output VAS Analog Input GND Ground SENSE/NC Analog Input. No Connect (NC) for TC648B FAULT/OTF Digital (Open-Drain) Output OTF for TC648B VOUT Digital Output VDD Power Supply Input ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V. Parameters Sym Min Typ Max Units Conditions Supply Voltage VDD 3.0 — 5.5 V Supply Current, Operating IDD — 200 400 µA Pins 6, 7 Open, CF = 1 µF, VIN = VC(MAX) Supply Current, Shutdown Mode IDD(SHDN) — 30 — µA Pins 6, 7 Open, CF = 1 µF, VIN = 0.35V VOUT Output Sink Current at VOUT Output IOL 1.0 — — mA VOL = 10% of VDD Source Current at VOUT Output IOH 5.0 — — mA VOH = 80% of VDD VIN, VAS Inputs Input Voltage at VIN for 100% PWM Duty Cycle VC(MAX) 2.45 2.60 2.75 V Over-Temperature Indication Threshold VOTF VC(MAX) + 20 mV V For TC646B and TC648B Over-Temperature Indication Threshold Hysteresis VOTF-HYS 80 mV For TC646B and TC648B VC(MAX) - VC(MIN) VC(SPAN) 1.3 1.4 1.5 V Hysteresis on Auto-Shutdown Comparator VHAS —70 — mV Auto-Shutdown Threshold VAS VC(MAX) - VC(SPAN) —VC(MAX) V Voltage Applied to VIN to Ensure Shutdown Mode VSHDN —— VDD x 0.13 V Voltage Applied to VIN to Release Shutdown Mode VREL VDD x 0.19 — — V VDD = 5V Hysteresis on VSHDN, VREL VHYST —0.03 X VDD —V VIN, VAS Input Leakage IIN - 1.0 — +1.0 µA Note 1 Note 1: Ensured by design, tested during characterization. 2: For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f. |
同様の部品番号 - TC646BEPA |
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同様の説明 - TC646BEPA |
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