2SC3391 datasheet(2/5 Pages) HITACHI

部品番号	2SC3391

部品情報	Silicon NPN Epitaxial Planar

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メーカー	HITACHI [Hitachi Semiconductor]

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2SC3391

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

30

V

Collector to emitter voltage

V

CEO

20

V

Emitter to base voltage

V

EBO

4V

Collector current

I

C

20

mA

Collector power dissipation

P

C

200

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

30

——V

I

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

20

——V

I

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

4

——V

I

E = 10 µA, IC = 0

Collector cutoff current

I

CBO

—

0.5

µAV

CB = 10 V, IE = 0

DC current transfer ratio

h

FE*

1

60

—

200

V

CE = 6 V, IC = 1 mA

Base to emitter voltage

V

BE

—

0.72

—

V

CE = 6 V, IC = 1 mA

Collector to emitter saturation

voltage

V

CE(sat)

—

0.17

—

V

I

C = 20 mA, IB = 4 mA

Gain bandwidth product

f

T

450

940

—

MHz

V

CE = 6 V, IC = 5 mA

Collector output capacitance

Cob

—

0.9

1.2

pF

V

CB = 10 V, IE = 0, f = 1 MHz

Power gain

PG

17

20

—

dB

V

CE = 6 V, IC = 1 mA,

f = 100 MHz

Noise figure

NF

—

3.5

5.5

dB

V

CE = 6 V, IC = 1 mA,

R

g = 50 Ω, f = 100 MHz

Note:

1. The 2SC3391 is grouped by h

FE as follows.

BC

60 to 120

100 to 200

See characteristic curves of 2SC535.

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