データシートサーチシステム |
|
2SD2106 データシート(PDF) 2 Page - Hitachi Semiconductor |
|
2SD2106 データシート(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SD2106 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage V CBO 120 V Collector to emitter voltage V CEO 120 V Emitter to base voltage V EBO 7V Collector current I C 6A Collector peak current I C(peak) 10 A Collector power dissipation P C 2W P C* 1 25 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 120 — — V I C = 0.1 mA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 120 — — V I C = 25 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 7— — V I E = 50 mA, IC = 0 Collector cutoff current I CBO —— 10 µAV CB = 100 V, IE = 0 I CEO — — 10 V CE = 100 V, RBE = ∞ DC current transfer ratio h FE 1000 — 20000 V CE = 3 V, IC = 3 A* 1 Collector to emitter saturation V CE(sat)1 — — 1.5 V I C = 3 A, IB = 6 mA* 1 voltage V CE(sat)2 — — 3.0 I C = 6 A, IB = 60 mA* 1 Base to emitter saturation V BE(sat)1 — — 2.0 V I C = 3 A, IB = 6 mA* 1 voltage V BE(sat)2 — — 3.5 I C = 6 A, IB = 60 mA* 1 Note: 1. Pulse test. |
同様の部品番号 - 2SD2106 |
|
同様の説明 - 2SD2106 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |