2SJ278 datasheet(5/8 Pages) HITACHI

部品番号	2SJ278

部品情報	Silicon P-Channel MOS FET

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メーカー	HITACHI [Hitachi Semiconductor]

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5 / 8 page

2SJ278

5

10

500

200

100

50

20

Reverse Drain Current

I

(A)

DR

Body–Drain Diode Reverse

Recovery Time

–0.02 –0.05 –0.1 –0.2

–0.5

–1

–2

di/dt = 50 A/µs

V

= 0, duty < 1 %

GS

0

–10

–20

–30

-40

–50

Drain to Source Voltage V

(V)

DS

Typical Capacitance vs.

Drain to Source Voltage

1000

100

10

1

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

0

–20

–40

–60

–80

0

4

8

12

16

20

Gate Charge

Qg (nc)

0

–4

–8

–12

–16

–20

–100

DS

V

ID = –1A

GS

V

Dynamic Input Characteristics

V

= –10 V

–25 V

–40 V

DD

V

= –10 V

–25 V

–40 V

DD

500

200

100

50

20

10

5

–0.01 –0.02

–0.05 –0.1 –0.2

–0.5

–1

Drain Current

I

(A)

D

Switching Characteristics

V

= –10 V, V

= –30 V

PW = 2 µs, duty < 1 %

GS

DD

t f

r

t

d(off)

t

d(on)

t

同様の部品番号 - 2SJ278

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SJ278	78Kb / 7P	Silicon P Channel MOS FET
	2SJ278MYTL-E	78Kb / 7P	Silicon P Channel MOS FET
	2SJ278MYTR-E	78Kb / 7P	Silicon P Channel MOS FET
	2SJ278	97Kb / 9P	Silicon P Channel MOS FET

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同様の説明 - 2SJ278

メーカー	部品番号	データシート	部品情報
Hitachi Semiconductor	2SJ221	48Kb / 8P	Silicon P-Channel MOS FET
	2SJ363	37Kb / 7P	Silicon P-Channel MOS FET
	2SJ386	38Kb / 7P	Silicon P-Channel MOS FET
Renesas Technology Corp	2SJ181(L)	109Kb / 7P	Silicon P Channel MOS FET
	2SJ555	109Kb / 10P	Silicon P Channel MOS FET
	2SJ518	102Kb / 9P	Silicon P Channel MOS FET
	2SJ526	110Kb / 10P	Silicon P Channel MOS FET
	2SJ542	107Kb / 10P	Silicon P Channel MOS FET
	2SJ543	107Kb / 10P	Silicon P Channel MOS FET
	2SJ550	95Kb / 9P	Silicon P Channel MOS FET
	2SJ551	95Kb / 9P	Silicon P Channel MOS FET