2SJ319L datasheet(5/9 Pages) HITACHI

部品番号	2SJ319L

部品情報	Silicon P-Channel MOS FET

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メーカー	HITACHI [Hitachi Semiconductor]

ホームページ	http://www.renesas.com/eng

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5 / 9 page

2SJ319(L), 2SJ319(S)

5

10

500

200

100

50

20

Reverse Drain Current

I

(A)

DR

Body–Drain Diode Reverse

Recovery Time

–0.05 –0.1

–0.2

–0.5

–1

–2

–5

di/dt = 50 A/µs, V

= 0

duty < 1 %, Ta = 25 °C

GS

0

–10

–20

–30

-40

–50

Drain to Source Voltage V

(V)

DS

Typical Capacitance vs.

Drain to Source Voltage

1000

200

500

100

50

20

10

5

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

0

–100

–200

–300

–400

0

4

8

12

16

20

Gate Charge

Qg (nc)

0

–4

–8

–12

–16

–20

–500

Dynamic Input Characteristics

GS

V

DS

V

= –50 V

–100 V

–150 V

DD

V DD = –150 V

–100 V

–50 V

500

200

100

50

20

10

5

–10

Drain Current

I

(A)

D

Switching Characteristics

–0.05 –0.1 –0.2

–0.5

–1

–2

–5

t f

r

t

d(off)

t

d(on)

t

V

= –10 V, V

= –30 V

duty < 1 %, PW = 2 µs

GS

DD

同様の部品番号 - 2SJ319L

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SJ319L	87Kb / 8P	Silicon P Channel MOS FET
Renesas Technology Corp	2SJ319L-E	87Kb / 8P	Silicon P Channel MOS FET

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同様の説明 - 2SJ319L

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