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2SJ529S データシート(PDF) 3 Page - Hitachi Semiconductor |
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2SJ529S データシート(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SJ529(L),2SJ529(S) 3 Main Characteristics 40 30 20 10 0 50 100 150 200 –10 –8 –6 –4 –2 0 –2 –4 –6 –8 –10 –5 V –4 V 0 –1–2–3 –4 –5 –10 V –3.5 V –3 V –10 –8 –6 –4 –2 –2.5 V –25 °C 25 °C Tc = 75 °C V = –2 V GS DS Pulse Test V = –10 V –0.1 –0.3 –1 –3 –10 –30 –100 –100 –20 –10 –2 –1 –0.2 –0.1 Ta = 25 °C 100 µ s 10 µ s –0.5 –5 –50 PW = 10 ms (1 shot) DC Operation (Tc=25 °C) Pulse Test Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) |
同様の部品番号 - 2SJ529S |
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同様の説明 - 2SJ529S |
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