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ST3426 データシート(PDF) 1 Page - Stanson Technology |
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ST3426 データシート(HTML) 1 Page - Stanson Technology |
1 / 6 page ST3426 N Channel Enhancement Mode MOSFET 3.0A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3426 2014. V1 1 DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching . PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Process Code FEATURE l 60V/3.0A, RDS(ON) = 90mΩ @VGS = 10V l 60V/2.0A, RDS(ON) = 110mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design 3 1 2 D G S |
同様の部品番号 - ST3426 |
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同様の説明 - ST3426 |
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