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2SK1317 データシート(PDF) 2 Page - Hitachi Semiconductor |
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2SK1317 データシート(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SK1317 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 1500 V Gate to source voltage V GSS ±20 V Drain current I D 2.5 A Drain peak current I D(pulse)* 1 7A Body to drain diode reverse drain current I DR 2.5 A Channel dissipation Pch* 2 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T C = 25 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 1500 — — V I D = 10 mA, VGS = 0 Gate to source leak current I GSS —— ±1 µAV GS = ±20 V, VDS = 0 Zero gate voltage drain current I DSS — — 500 µAV DS = 1200 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 4.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) —9 12 Ω I D = 2 A, VGS = 15 V * 1 Forward transfer admittance |yfs| 0.45 0.75 — S I D = 1 A, VDS = 20 V * 1 Input capacitance Ciss — 990 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 125 — pF f = 1 MHz Reverse transfer capacitance Crss — 60 — pF Turn-on delay time t d(on) — 17 — ns I D = 2 A, VGS = 10 V, Rise time t r — 70 — ns R L = 15 Ω Turn-off delay time t d(off) — 110 — ns Fall time t f —60 — ns Body to drain diode forward voltage V DF — 0.9 — V I F = 2 A, VGS = 0 Body to drain diode reverse recovery time t rr — 1750 — ns I F = 2 A, VGS = 0, di F/dt = 100 A/µs Note: 1. Pulse test |
同様の部品番号 - 2SK1317 |
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同様の説明 - 2SK1317 |
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