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2SK1317 データシート(PDF) 2 Page - Hitachi Semiconductor

部品番号 2SK1317
部品情報  Silicon N-Channel MOS FET
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メーカー  HITACHI [Hitachi Semiconductor]
ホームページ  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1317 データシート(HTML) 2 Page - Hitachi Semiconductor

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2SK1317
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
1500
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
2.5
A
Drain peak current
I
D(pulse)*
1
7A
Body to drain diode reverse drain current
I
DR
2.5
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C =
25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
1500
V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±1
µAV
GS = ±20 V, VDS = 0
Zero gate voltage drain current I
DSS
500
µAV
DS = 1200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
4.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—9
12
I
D = 2 A, VGS = 15 V *
1
Forward transfer admittance
|yfs|
0.45
0.75
S
I
D = 1 A, VDS = 20 V *
1
Input capacitance
Ciss
990
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
125
pF
f = 1 MHz
Reverse transfer capacitance
Crss
60
pF
Turn-on delay time
t
d(on)
17
ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
70
ns
R
L = 15 Ω
Turn-off delay time
t
d(off)
110
ns
Fall time
t
f
—60
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 2 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
1750
ns
I
F = 2 A, VGS = 0,
di
F/dt = 100 A/µs
Note:
1. Pulse test


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