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LS312 データシート(PDF) 1 Page - Micross Components |
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LS312 データシート(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES HIGH GAIN hFE ≥ 200 @ 10µA‐1mA TIGHT VBE MATCHING |VBE1 – VBE2 |= 0.2mV TYP. HIGH ft 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation (One side) 250mW Continuous Power Dissipation (Both sides) 500mW Linear Derating factor (One side) 2.3mW/°C Linear Derating factor (Both sides) 4.3mW/°C Maximum Currents Collector Current 10mA MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VBE1 – VBE2 | Base Emitter Voltage Differential ‐‐ 0.2 0.5 mV IC = 10µA, VCE = 5V ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature ‐‐ 0.5 2 µV/°C IC = 10µA, VCE = 5V TA = ‐55°C to +125°C |IB1 – IB2 | Base Current Differential ‐‐ ‐‐ 5 nA IC = 10µA, VCE = 5V |∆ (IB1 – IB2)|/°C Base Current Differential Change with Temperature ‐‐ ‐‐ 0.3 nA/°C IC = 10µA, VCE = 5V TA = ‐55°C to +125°C hFE1 /hFE2 DC Current Gain Differential ‐‐ 5 ‐‐ % IC = 10µA, VCE = 5V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVCBO Collector to Base Voltage 60 ‐‐ ‐‐ V IC = 10µA, IE = 0 BVCEO Collector to Emitter Voltage 60 ‐‐ ‐‐ V IC = 10µA, IB = 0 BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V IE = 10µA, IC = 0 2 BVCCO Collector to Collector Voltage 100 ‐‐ ‐‐ V IC = 10µA, IE = 0 hFE DC Current Gain 200 ‐‐ ‐‐ IC = 10µA, VCE = 5V 200 ‐‐ ‐‐ IC = 100µA, VCE = 5V 200 ‐‐ ‐‐ IC = 1mA, VCE = 5V VCE(SAT) Collector Saturation Voltage ‐‐ ‐‐ 0.25 V IC = 1mA, IB = 0.1mA IEBO Emitter Cutoff Current ‐‐ ‐‐ 0.2 nA IE = 0, VCB = 3V ICBO Collector Cutoff Current ‐‐ ‐‐ 0.2 nA IE = 0, VCB = 30V COBO Output Capacitance ‐‐ ‐‐ 2 pF IE = 0, VCB = 5V CC1C2 Collector to Collector Capacitance ‐‐ ‐‐ 2 pF VCC = 0V IC1C2 Collector to Collector Leakage Current ‐‐ ‐‐ 0.5 nA VCC = ±45V fT Current Gain Bandwidth Product 200 ‐‐ ‐‐ MHz IC = 1mA, VCE = 5V NF Narrow Band Noise Figure ‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. LS312 MONOLITHIC DUAL NPN TRANSISTOR LS312 Features: Very high gain Tight matching Low Output Capacitance The LS312 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Linear Systems High Voltage Super-Beta Monolithic Dual NPN Available Packages: LS312 in P-DIP LS312 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx P-DIP (Top View) |
同様の部品番号 - LS312 |
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同様の説明 - LS312 |
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