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2SK1764 データシート(PDF) 2 Page - Hitachi Semiconductor |
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2SK1764 データシート(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SK1764 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 60 V Gate to source voltage V GSS ±20 V Drain current I D 2A Drain peak current I D(pulse)* 1 4A Body to drain diode reverse drain current I DR 4A Channel power dissipation Pch* 2 1W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) 3. Marking is "KY". Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source cutoff voltage V GS(off) 1— 2VV DS = 10 V, ID = 1 mA Drain to source cutoff current I DSS —— 10 µAV DS = 50 V, VGS = 0 Gate to source cutoff current I GSS —— ±5 µAV GS = ±15 V, VDS = 0 Static drain to source on state resistance R DS(on)1 — 0.3 0.45 Ω V GS = 10 V I D = 1 A* 1 Static drain to source on state resistance R DS(on)2 — 0.4 0.60 Ω V GS = 4 V I D = 1 A* 1 Forward transfer admittance |y fs| 0.9 1.7 — S V DS = 10 V I D = 1 A* 1 Input capacitance Ciss — 140 — pF V DS = 10 V Output capacitance Coss — 75 — pF V GS = 0 Reverse transfer capacitance Crss — 20 — pF f = 1 MHz Turn on time t on — 18 — ns V DS = 10 V, ID = 1 A* 1 Turn off time t off — 80 — ns R L = 30 Ω Note 1. Pulse Test See characteristics curves of 2SK975 |
同様の部品番号 - 2SK1764 |
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同様の説明 - 2SK1764 |
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