データシートサーチシステム |
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2SK1971 データシート(PDF) 3 Page - Hitachi Semiconductor |
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2SK1971 データシート(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK1971 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 500 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS =400 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 0.19 0.23 Ω I D = 18 A V GS = 10 V* 1 Forward transfer admittance |y fs|16 24 — S I D = 18 A V DS = 10 V* 1 Input capacitance Ciss — 4320 — pF V DS = 10 V Output capacitance Coss — 1120 — pF V GS = 0 Reverse transfer capacitance Crss — 130 — pF f = 1 MHz Turn-on delay time t d(on) — 50 — ns I D = 18A Rise time t r — 170 — ns V GS = 10 V Turn-off delay time t d(off) — 320 — ns R L = 1.67Ω Fall time t f — 130 — ns Body to drain diode forward voltage V DF — 1.1 — V I F =35 A, VGS = 0 Body to drain diode reverse recovery time t rr — 530 — ns I F = 35 A, VGS = 0, di F / dt = 100 A / µs Note 1. Pulse Test |
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同様の説明 - 2SK1971 |
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