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2SK2059 データシート(PDF) 3 Page - Hitachi Semiconductor |
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2SK2059 データシート(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK2059(L), 2SK2059(S) 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 600 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 100 µAV DS =500 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 3.8 5.0 Ω I D = 1A V GS = 10 V* 1 Forward transfer admittance |y fs| 1.2 2.0 — S I D = 1A V DS = 10 V* 1 Input capacitance Ciss — 295 — pF V DS = 10 V Output capacitance Coss — 70 — pF V GS = 0 Reverse transfer capacitance Crss — 12 — pF f = 1 MHz Turn-on delay time t d(on) —8 —ns I D = 1A Rise time t r — 25 — ns V GS = 10 V Turn-off delay time t d(off) — 65 — ns R L = 30Ω Fall time t f —30—ns Body to drain diode forward voltage V DF — 0.9 — V I F =3 A, VGS = 0 Body to drain diode reverse recovery time t rr — 220 — ns I F = 3A, VGS = 0, di F / dt = 100 A / µs Note 1. Pulse Test |
同様の部品番号 - 2SK2059 |
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同様の説明 - 2SK2059 |
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