2SK2212 datasheet(5/10 Pages) HITACHI

部品番号	2SK2212

部品情報	Silicon N-Channel MOS FET

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メーカー	HITACHI [Hitachi Semiconductor]

ホームページ	http://www.renesas.com/eng

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2SK2212

5

4

3

2

1

0

Gate to Source Voltage

V

(V)

GS

Pulse Test

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

48

12

16

20

I

= 10 A

D

2 A

5 A

Drain Current

I

(A)

D

Static Drain to Source on State Resistance

vs. Drain Current

10

2

5

1

0.1

0.2

0.5

12

5

10

20

50

V

= 10 V

GS

15 V

Pulse Test

1.0

0.8

0.6

0.4

0.2

–40

0

40

80

120

160

Case Temperature

Tc

(°C)

0

Static Drain to Source on State Resistance

vs. Temperature

I

= 10 A

D

V

= 10 V

Pulse Test

GS

2 A

5 A

0.1

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

0.3

1

3

10

30

100

10

2

5

1

0.1

0.2

0.5

25 °C

Tc = –25 °C

75 °C

DS

V

= 10 V

Pulse Test

同様の部品番号 - 2SK2212

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SK2212	924Kb / 7P	Silicon N Channel MOS FET
Inchange Semiconductor ...	2SK2212	295Kb / 2P	isc N-Channel MOSFET Transistor
Renesas Technology Corp	2SK2212-E	924Kb / 7P	Silicon N Channel MOS FET

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同様の説明 - 2SK2212

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