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2SK2247 データシート(PDF) 2 Page - Hitachi Semiconductor |
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2SK2247 データシート(HTML) 2 Page - Hitachi Semiconductor |
2 / 7 page 2SK2247 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 30 V Gate to source voltage V GSS ±20 V Drain current I D 2A Drain peak current I D(pulse)* 1 4A Body to drain diode reverse drain current I DR 2A Channel dissipation Pch* 2 1W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3. Marking is “QY” Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 30 — — V I D = 1 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±10 µA, VDS = 0 Gate to source leak current I GSS —— ±5 µAV GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS —— 1 µAV DS = 24 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 1.5 2.0 V I D = 100 µA, VDS = 10 V Static drain to source on state resistance R DS(on) — 0.3 0.45 Ω I D = 1 A V GS = 4 V* 1 — 0.22 0.35 Ω I D = 1 A V GS = 10 V* 1 Forward transfer admittance |y fs| 1.5 1.9 — S I D = 1 A V DS = 10 V* 1 Input capacitance Ciss — 177 — pF V DS = 10 V Output capacitance Coss — 116 — pF V GS = 0 Reverse transfer capacitance Crss — 43 — pF f = 1 MHz Turn-on delay time t d(on) —8 —ns I D = 1 A Rise time t r — 14 — ns V GS = 10 V Turn-off delay time t d(off) — 37 — ns R L = 30 Ω Fall time t f — 33 — ns PW = 2 µs Note 1. Pulse Test |
同様の部品番号 - 2SK2247 |
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同様の説明 - 2SK2247 |
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