2SK3288 datasheet(4/8 Pages) HITACHI

部品番号	2SK3288

部品情報	Silicon N Channel MOS FET High Speed Switching

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メーカー	HITACHI [Hitachi Semiconductor]

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2SK3288

4

2.0

1.6

1.2

0.8

0.4

0

24

6

8

10

0.1

0.5

0.2

50

20

10

2

5

1.0

0.5

10

8

6

4

2

–40

0

40

80

120

160

0

1.0

I

= 100mA

D

50m A

Pulse Test

V

= 4V

GS

10 V

Pulse Test

I

= 100m A

D

V

= 4 V

GS

10 V

Gate to Source Voltage

V

(V)

GS

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Drain Current

I

(A)

D

Static Drain to Source on State

Resistance vs. Drain Current

Case Temperature

Tc

(°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current I

(A)

D

Forward Transfer Admittance

vs. Drain Current

10m A

10mA

10mA,50mA,100m A

50mA

0.01

0.02

0.05

0.1

0.5

0.2

0.1

0.02

0.05

0.01

0.005

V

= 10 V

Pulse Test

DS

Tc = –25 °C

25 °C

75 °C

同様の部品番号 - 2SK3288

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SK3288	99Kb / 12P	Silicon N Channel MOS FET High Speed Switching June 1999

More results

同様の説明 - 2SK3288

メーカー	部品番号	データシート	部品情報
Hitachi Semiconductor	2SK3380	26Kb / 5P	Silicon N Channel MOS FET High Speed Switching
Sanyo Semicon Device	FW306	17Kb / 2P	N- Channel Silicon MOS FET High Speed Switching
Renesas Technology Corp	2SK3287	157Kb / 10P	Silicon N Channel MOS FET High Speed Switching
Hitachi Semiconductor	2SK3289	27Kb / 5P	Silicon N Channel MOS FET High Speed Switching
Hitachi Semiconductor	2SK3348	40Kb / 8P	Silicon N Channel MOS FET High Speed Switching
Renesas Technology Corp	2SK3289	44Kb / 7P	Silicon N Channel MOS FET High Speed Switching
	2SK3378	140Kb / 7P	Silicon N Channel MOS FET High Speed Switching
	2SK3348	157Kb / 10P	Silicon N Channel MOS FET High Speed Switching
	2SK3349	97Kb / 12P	Silicon N Channel MOS FET High Speed Switching June 1999
Hitachi Semiconductor	2SK3287	40Kb / 8P	Silicon N Channel MOS FET High Speed Switching