データシートサーチシステム |
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HM628512BLFP-5 データシート(PDF) 1 Page - Hitachi Semiconductor |
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HM628512BLFP-5 データシート(HTML) 1 Page - Hitachi Semiconductor |
1 / 18 page HM628512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system. Features • Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation Active: 50 mW/MHz (typ) Standby: 10 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three state output • Directly TTL compatible: All inputs and outputs • Battery backup operation |
同様の部品番号 - HM628512BLFP-5 |
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同様の説明 - HM628512BLFP-5 |
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