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STFI28N60M2 データシート(PDF) 7 Page - STMicroelectronics

部品番号 STFI28N60M2
部品情報  N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFI28N60M2 データシート(HTML) 7 Page - STMicroelectronics

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DocID025255 Rev 2
7/14
STF28N60M2, STFI28N60M2
Electrical characteristics
14
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Normalized VDS vs temperature
Figure 13. Source-drain diode forward
characteristics
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
10000
AM17993v1
Eoss
4
2
0
0
100
VDS(V)
(
µJ)
400
200 300
6
500
600
8
10
AM17994v1
VGS(th)
1.0
0.9
0.8
0.7
-50
0
TJ(°C)
(norm)
-25
1.1
75
25
50
100
ID=250
µA
AM17995v1
RDS(on)
1.9
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.7
1.1
1.5
1.7
2.1
2.3
ID=11A
AM17996v1
VDS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.91
0.95
0.99
1.03
ID=1mA
1.07
1.11
AM117997v1
VSD
0
4
ISD(A)
(V)
12
8
0
0.2
0.4
0.6
TJ=-50°C
TJ=150°C
TJ=25°C
0.8
1
16
20
1.4
1.2
AM17998v1


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