データシートサーチシステム |
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SI4427DY-T1 データシート(PDF) 3 Page - Vishay Siliconix |
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SI4427DY-T1 データシート(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si4427DY Vishay Siliconix New Product Document Number: 71308 S-51452—Rev. B, 01-Aug-05 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 1500 3000 4500 6000 7500 9000 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 –50 –25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 20 40 60 80 100 120 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 10203040 50 VDS – Drain-to-Source Voltage (V) Coss Ciss VDS = 15 V ID = 13.3 A ID – Drain Current (A) VGS = 10 V ID = 13.3 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg – Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 2468 10 TJ = 25_C ID = 13.3 A 50 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) VGS = 2.5 V TJ = 150_C VGS = 4.5 V Crss |
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