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1N8030-GA データシート(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N8030-GA データシート(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 5 page 1N8030-GA Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg1 of 4 1 2 3 PIN 2 PIN 1 NC PIN 3 High Temperature Silicon Carbide Power Schottky Diode Features Package 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of V F Temperature independent switching behavior Lowest figure of merit Q C/IF Available screened to Mil-PRF-19500 RoHS Compliant TO – 257 (Isolated Base-plate Hermetic Package) Advantages Applications High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery charge Industry’s lowest device capacitance Ideal for output switching of power supplies Best in class reverse leakage current at operating temperature Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage VRRM 650 V Continuous forward current IF TC = 25 °C 2.5 A Continuous forward current IF TC ≤ 225 °C 0.75 A RMS forward current IF(RMS) TC ≤ 225 °C 1.3 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms 10 A Non-repetitive peak forward current IF,max TC = 25 °C, tP = 10 µs 65 A I 2t value ∫i 2 dt TC = 25 °C, tP = 10 ms 0.5 A 2S Power dissipation Ptot TC = 25 °C 24 W Operating and storage temperature Tj , Tstg -55 to 250 °C Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage VF IF = 0.75 A, Tj = 25 °C 1.4 V IF = 0.75 A, Tj = 250 °C 2.3 Reverse current IR VR = 650 V, Tj = 25 °C 1 5 µA VR = 650 V, Tj = 250 °C 5 50 Total capacitive charge QC IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 210 °C VR = 400 V 7 nC Switching time ts VR = 400 V < 17 ns Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 76 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 12 VR = 650 V, f = 1 MHz, Tj = 25 °C 12 Thermal Characteristics Thermal resistance, junction - case RthJC 9.52 °C/W Mechanical Properties Mounting torque M 0.6 Nm VRRM = 650 V IF = 2.5 A QC = 7 nC |
同様の部品番号 - 1N8030-GA |
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同様の説明 - 1N8030-GA |
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