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1N8030-GA データシート(PDF) 1 Page - GeneSiC Semiconductor, Inc.

部品番号 1N8030-GA
部品情報  Power Schottky Diode
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メーカー  GENESIC [GeneSiC Semiconductor, Inc.]
ホームページ  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N8030-GA データシート(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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1N8030-GA
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
Pg1 of 4
1 2 3
PIN 2
PIN 1
NC
PIN 3
High Temperature Silicon Carbide
Power Schottky Diode
Features
Package
 650 V Schottky rectifier
 250 °C maximum operating temperature
 Electrically isolated base-plate
 Zero reverse recovery charge
 Superior surge current capability
 Positive temperature coefficient of V
F
 Temperature independent switching behavior
 Lowest figure of merit Q
C/IF
 Available screened to Mil-PRF-19500
 RoHS Compliant
TO
– 257 (Isolated Base-plate Hermetic Package)
Advantages
Applications
 High temperature operation
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Industry’s lowest reverse recovery charge
 Industry’s lowest device capacitance
 Ideal for output switching of power supplies
 Best in class reverse leakage current at operating temperature
 Down Hole Oil Drilling
 Geothermal Instrumentation
 Solenoid Actuators
 General Purpose High-Temperature Switching
 Amplifiers
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
Maximum Ratings at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
Repetitive peak reverse voltage
VRRM
650
V
Continuous forward current
IF
TC = 25 °C
2.5
A
Continuous forward current
IF
TC ≤ 225 °C
0.75
A
RMS forward current
IF(RMS)
TC ≤ 225 °C
1.3
A
Surge non-repetitive forward current, Half Sine
Wave
IF,SM
TC = 25 °C, tP = 10 ms
10
A
Non-repetitive peak forward current
IF,max
TC = 25 °C, tP = 10 µs
65
A
I
2t value
∫i
2 dt
TC = 25 °C, tP = 10 ms
0.5
A
2S
Power dissipation
Ptot
TC = 25 °C
24
W
Operating and storage temperature
Tj , Tstg
-55 to 250
°C
Electrical Characteristics at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Diode forward voltage
VF
IF = 0.75 A, Tj = 25 °C
1.4
V
IF = 0.75 A, Tj = 250 °C
2.3
Reverse current
IR
VR = 650 V, Tj = 25 °C
1
5
µA
VR = 650 V, Tj = 250 °C
5
50
Total capacitive charge
QC
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V
7
nC
Switching time
ts
VR = 400 V
< 17
ns
Total capacitance
C
VR = 1 V, f = 1 MHz, Tj = 25 °C
76
pF
VR = 400 V, f = 1 MHz, Tj = 25 °C
12
VR = 650 V, f = 1 MHz, Tj = 25 °C
12
Thermal Characteristics
Thermal resistance, junction - case
RthJC
9.52
°C/W
Mechanical Properties
Mounting torque
M
0.6
Nm
VRRM
=
650 V
IF
=
2.5 A
QC
=
7 nC


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