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BAP51-03_2015 データシート(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP51-03_2015 データシート(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 8 page 1999 Aug 16 4 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 GRAPHICAL DATA Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage MGS322 10 2 5 1 10−1 110 IF (mA) r D ( Ω) Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 020 VR (V) Cd (fF) 500 0 100 MGS323 200 300 400 4 8 12 16 Fig.3 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 0.5 3 0 −2.5 −2 MGS659 −1.5 −1 −0.5 1 1.5 2 2.5 f (GHz) |S21| 2 (dB) (2) (3) (1) Fig.4 Insertion loss ( |S21|2) of the diode as a function of frequency; typical values. (1) IF = 10 mA.; (2) IF = 1 mA.; (3) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. handbook, halfpage 0.5 3 0 −25 −20 MGS660 −15 −10 −5 1 1.5 2 2.5 f (GHz) |S21| 2 (dB) Fig.5 Isolation ( |S21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
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