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SI2301 データシート(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

部品番号 SI2301
部品情報  High dense cell design for extremely low RDS(ON)
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メーカー  MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]
ホームページ  http://www.makosemi.hk/
Logo MAKOSEMI - MAKO SEMICONDUCTOR CO.,LIMITED

SI2301 データシート(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

  SI2301 Datasheet HTML 1Page - MAKO SEMICONDUCTOR CO.,LIMITED SI2301 Datasheet HTML 2Page - MAKO SEMICONDUCTOR CO.,LIMITED SI2301 Datasheet HTML 3Page - MAKO SEMICONDUCTOR CO.,LIMITED  
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Page:P3 -P1
Plastic-Encapsulate Mosfets
MAKO SEMICONDUCTOR CO.,LIMITED
FEATURES
High dense cell design for extremely low RDS(ON)
Rugged and reliable
Case Material: Molded Plastic.
Parameter
Symbol
Ratings
Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
8
V
Drain Current (Continuous)
ID
-2.8-
A
Drain Current (Pulsed)
1
IDM
-10
A
Total Power Dissipation @TA=25oC
PD
1.25
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 to +150
°C
Thermal Resistance Junction to Ambient (PCB mounted)
2
RθJA
100
°C/W
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS = -20V, VGS = 0V
-1
µA
Gate Body Leakage Current, Forward
IGSSF
VGS = 8V, VDS = 0V
100
nA
Gate Body Leakage Current, Reverse
IGSSR
VGS = -8V, VDS = 0V
-100
nA
On Characteristics
c
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = -250µA
-0.45
V
Static Drain-Source
On-Resistance
RDS(on)
VGS = -4.5V, ID = -2.8A
80
120
mΩ
VGS = -2.5V, ID = -2.0A
110
150
mΩ
Forward Transconductance
gFS
VDS = -5V, ID = -2.8A
8
S
Dynamic Characteristics
d
Input Capacitance
Ciss
VDS = -6V, VGS = 0V, f = 1.0
MHz
880
pF
Output Capacitance
Coss
270
pF
Reverse Transfer Capacitance
Crss
175
pF
Switching Characteristics
d
Turn-On Delay Time
td(on)
VDD = -6V, ID = -1A, VGS =
-4.5V, RGEN = 6Ω
11
20
ns
Turn-On Rise Time
tr
5
10
ns
Turn-Off Delay Time
td(off)
32
65
ns
Turn-Off Fall Time
tf
23
45
ns
P-Channel MOSFET
SOT-23
1.Gate
2.Source
3.Drain
S
G
D
SI2301
Absolute Maximum Ratings (TA=25
oC, unless otherwise noted)
http://www.makosemi.hk/


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