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SI2301 データシート(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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SI2301 データシート(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
1 / 3 page Page:P3 -P1 Plastic-Encapsulate Mosfets MAKO SEMICONDUCTOR CO.,LIMITED FEATURES High dense cell design for extremely low RDS(ON) Rugged and reliable Case Material: Molded Plastic. Parameter Symbol Ratings Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V Drain Current (Continuous) ID -2.8- A Drain Current (Pulsed) 1 IDM -10 A Total Power Dissipation @TA=25oC PD 1.25 W Operating Junction and Storage Temperature Range Tj, Tstg -55 to +150 °C Thermal Resistance Junction to Ambient (PCB mounted) 2 RθJA 100 °C/W Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -1 µA Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -8V, VDS = 0V -100 nA On Characteristics c Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250µA -0.45 V Static Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = -2.8A 80 120 mΩ VGS = -2.5V, ID = -2.0A 110 150 mΩ Forward Transconductance gFS VDS = -5V, ID = -2.8A 8 S Dynamic Characteristics d Input Capacitance Ciss VDS = -6V, VGS = 0V, f = 1.0 MHz 880 pF Output Capacitance Coss 270 pF Reverse Transfer Capacitance Crss 175 pF Switching Characteristics d Turn-On Delay Time td(on) VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6Ω 11 20 ns Turn-On Rise Time tr 5 10 ns Turn-Off Delay Time td(off) 32 65 ns Turn-Off Fall Time tf 23 45 ns P-Channel MOSFET SOT-23 1.Gate 2.Source 3.Drain S G D SI2301 Absolute Maximum Ratings (TA=25 oC, unless otherwise noted) http://www.makosemi.hk/ |
同様の部品番号 - SI2301 |
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同様の説明 - SI2301 |
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