SI6963DQ-T1 datasheet(2/5 Pages) VISHAY

部品番号	SI6963DQ-T1

部品情報	Dual P-Channel 2.5-V (G-S) MOSFET

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Si6963DQ

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71812

S-20220—Rev. D, 01-Apr-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 mA

- 0.6

- 1.4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

-1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V, TJ = 55_C

-25

mA

On-State Drain Currenta

ID(on)

VDS w -5 V, VGS = - 4.5 V

-30

A

Drain Source On State Resistancea

r

VGS = - 4.5 V, ID = - 3.5 A

0.037

0.050

W

Drain-Source On-State Resistancea

rDS(on)

VGS = - 2.5 V, ID = - 2.7 A

0.062

0.085

W

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 3.5 A

10

S

Diode Forward Voltagea

VSD

IS = - 1.25 A, VGS = 0 V

- 0.72

- 1.2

V

Dynamicb

Total Gate Charge

Qg

12.5

20

Gate-Source Charge

Qgs

VDS = - 10 V, VGS = - 4.5 V, ID = - 3.5 A

1.9

nC

Gate-Drain Charge

Qgd

3.2

Turn-On Delay Time

td(on)

20

30

Rise Time

tr

VDD = - 10 V, RL = 10 W

26

40

Turn-Off Delay Time

td(off)

VDD = - 10 V, RL = 10 W

ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W

48

75

ns

Fall Time

tf

30

45

Source-Drain Reverse Recovery Time

trr

IF = - 1.25 A, di/dt = 100 A/ms

30

50

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

6

12

18

24

30

0

2468

10

VGS = 5 thru 3.5 V

TC = - 55_C

125

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

2 V

3 V

2.5 V

同様の部品番号 - SI6963DQ-T1

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	SI6963DQ	98Kb / 5P	Dual P-Channel 2.5V Specified PowerTrench MOSFET

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