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BAP55L_2015 データシート(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP55L_2015 データシート(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 8 page 9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 4 of 8 Philips Semiconductors BAP55L Silicon PIN diode f = 100 MHz; Tj =25 °C. f = 1 MHz; Tj =25 °C. Fig 1. Forward resistance as a function of forward current; typical values Fig 2. Diode capacitance as a function of reverse voltage; typical values (1) IF = 100 mA. (2) IF =10mA. (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. Fig 3. Insertion loss ( |s21|2) of the diode as a function of frequency; typical values Fig 4. Isolation ( |s12|2) of the diode as a function of frequency; typical values IF (mA) 10−1 102 10 1 001aac628 10 1 102 rD ( Ω) 10−1 VR (V) 020 15 510 001aac629 200 100 300 400 Cd (fF) 0 001aac630 f (MHz) 03 2 1 −0.50 −0.75 −0.25 0 |S21|2 (dB) −1.00 (1) (2) (3) (4) 001aac631 f (MHz) 03 2 1 −20 −30 −10 0 |S12|2 (dB) −40 |
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