BF1201_2015 datasheet(6/16 Pages) JMNIC

部品番号	BF1201_2015

部品情報	N-channel dual-gate PoLo MOS-FETs

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メーカー	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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6 / 16 page

2000 Mar 29

6

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate PoLo MOS-FETs

BF1201; BF1201R;

BF1201WR

handbook, halfpage

0

IG1 (µA)

10

50

16

12

4

0

8

20

30

40

MCD939

ID

(mA)

Fig.9

Drain current as a function of gate 1 current;

typical values.

VDS = 5 V; VG2-S =4V.

Tj =25 °C.

handbook, halfpage

05

20

0

4

8

12

16

12

3

4

VGG (V)

ID

(mA)

MCD940

Fig.10 Drain current as a function of gate 1 supply

voltage (= VGG); typical values.

VDS = 5 V; VG2-S = 4 V; Tj =25 °C.

RG1 =62kΩ (connected to VGG); see Fig.21.

handbook, halfpage

010

25

0

5

10

15

20

24

6

8

VGG = VDS (V)

ID

(mA)

MCD941

RG1 = 39 kΩ

47 k

Ω

56 k

Ω

62 k

Ω

68 k

Ω

82 k

Ω

100 k

Ω

Fig.11 Drain current as a function of gate 1 (= VGG)

and drain supply voltage; typical values.

VG2-S = 4 V; Tj =25 °C.

RG1 connected to VGG; see Fig.21.

handbook, halfpage

024

6

VG2-S (V)

ID

(mA)

20

0

16

12

8

4

MCD942

VGG = 5 V

4.5 V

4 V

3.5 V

3 V

VDS = 5 V; Tj =25 °C.

RG1 =62kΩ (connected to VGG); see Fig.21.

Fig.12 Drain current as a function of gate 2

voltage; typical values.

同様の部品番号 - BF1201_2015

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BF1201R	113Kb / 16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF1201R	9Mb / 130P	RF Manual 16th edition June 2012
	BF1201WR	113Kb / 16P	N-channel dual-gate PoLo MOS-FETs 2000 Mar 29
	BF1201WR	9Mb / 130P	RF Manual 16th edition June 2012
Quanzhou Jinmei Electro...	BF1201	127Kb / 16P	N-channel dual-gate PoLo MOS-FETs

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同様の説明 - BF1201_2015

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