BF1205C_2015 datasheet(8/22 Pages) JMNIC

部品番号	BF1205C_2015

部品情報	Dual N-channel dual gate MOS-FET

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BF1205C_2

Product data sheet

Rev. 02 — 15 August 2006

8 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

VDS(a) =VDS(b) =Vsupply, VG2-S =4V, Tj =25 °C,

RG1(b) = 150 kΩ (connected to ground); see

Figure 3.

(1) VDS(b) =5V.

(2) VDS(b) = 4.5 V.

(3) VDS(b) =4V.

(4) VDS(b) = 3.5 V.

(5) VDS(b) =3V.

(6) VDS(b) = 2.5 V.

VDS(a) =5V; VG1-S(b) = 0 V; gate 1 (a) = open;

Tj =25 °C.

Fig 8.

Drain current of ampliﬁer a as a function of

supply voltage of a and b ampliﬁer; typical

values.

Fig 9.

Drain current as a function of gate 2 and drain

supply voltage; typical values.

Vsupply (V)

05

4

23

1

001aaa558

8

12

4

16

20

ID

(mA)

0

001aaa559

VG2-S (V)

06

4

2

16

8

24

32

ID

(mA)

0

(1)

(2)

(3)

(4)

(5)

(6)

VDS(a) =VDS(b) =5V; VG1-S(b) =0V; fw = 50 MHz;

funw = 60 MHz; Tamb =25 °C; see Figure 33.

VDS(a) =VDS(b) =5V; VG1-S(b) = 0 V; f = 50 MHz; see

Figure 33.

Fig 10. Unwanted voltage for 1 % cross-modulation as

a function of gain reduction; typical values.

Fig 11. Gain reduction as a function of AGC voltage;

typical values.

gain reduction (dB)

050

40

20

30

10

001aaa560

100

90

110

120

Vunw

(dB

µV)

80

VAGC (V)

04

3

12

001aaa561

30

20

40

10

0

gain

reduction

(dB)

50

同様の部品番号 - BF1205C_2015

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Quanzhou Jinmei Electro...	BF1205C	179Kb / 22P	Dual N-channel dual gate MOS-FET

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同様の説明 - BF1205C_2015

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