BF1207_2015 datasheet(4/22 Pages) JMNIC

部品番号	BF1207_2015

部品情報	Dual N-channel dual gate MOSFET

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9397 750 14955

Product data sheet

Rev. 01 — 28 July 2005

4 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

6.

Thermal characteristics

7.

Static characteristics

Fig 1.

Power derating curve

Tsp (°C)

0

200

150

50

100

001aac741

100

150

50

200

250

Ptot

(mW)

0

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-sp)

thermal resistance from junction

to soldering point

240

K/W

Table 7:

Static characteristics

Tj =25 °C.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Per MOSFET; unless otherwise speciﬁed

V(BR)DSS

drain-source breakdown voltage

VG1-S =VG2-S =0V; ID =10 µA

ampliﬁer A

6

-

V

ampliﬁer B

6

-

V

V(BR)G1-SS

gate1-source breakdown voltage

VGS =VDS =0V; IG1-S =10mA

6

-

10

V

V(BR)G2-SS

gate2-source breakdown voltage

VGS =VDS =0V; IG2-S =10mA

6

-

10

V

VF(S-G1)

forward source-gate1 voltage

VG2-S =VDS =0V; IS-G1 = 10 mA

0.5

-

1.5

V

VF(S-G2)

forward source-gate2 voltage

VG1-S =VDS =0V; IS-G2 = 10 mA

0.5

-

1.5

V

VG1-S(th)

gate1-source threshold voltage

VDS =5V; VG2-S =4V; ID = 100 µA

0.3

-

1.0

V

VG2-S(th)

gate2-source threshold voltage

VDS =5V; VG1-S =5V; ID = 100 µA

0.4

-

1.0

V

IDSX

drain-source current

VG2-S =4V; VDS =5V; RG1 =68kΩ

ampliﬁer A

[1] 13

-

23

mA

ampliﬁer B

[2] 9

-

19

mA

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