BF1208D_2015 datasheet(3/22 Pages) JMNIC

部品番号	BF1208D_2015

部品情報	Dual N-channel dual gate MOSFET

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BF1208D_1

Product data sheet

Rev. 01 — 16 May 2007

3 of 22

NXP Semiconductors

BF1208D

Dual N-channel dual gate MOSFET

3.

Ordering information

4.

Marking

5.

Limiting values

[1]

Tsp is the temperature at the soldering point of the source lead.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BF1208D

-

plastic surface-mounted package; 6 leads

SOT666

Table 4.

Marking codes

Type number

Marking code

BF1208D

4A

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per MOSFET

VDS

drain-source voltage

DC

-

6

V

ID

drain current

DC

-

30

mA

IG1

gate1 current

-

±10

mA

IG2

gate2 current

-

±10

mA

Ptot

total power dissipation

Tsp ≤ 109 °C

[1] -

180

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Fig 1.

Power derating curve

Tsp (˚C)

0

200

150

50

100

001aac193

100

150

50

200

250

Ptot

(mW)

0

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