BF1210_2015 datasheet(9/21 Pages) JMNIC

部品番号	BF1210_2015

部品情報	Dual N-channel dual gate MOSFET

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9 / 21 page

BF1210_1

Product data sheet

Rev. 01 — 25 October 2006

9 of 21

NXP Semiconductors

BF1210

Dual N-channel dual gate MOSFET

VDS(A) =5V; VGG =5V; ID(nom)(A) =19mA;

RG1(A) =59kΩ; f = 50 MHz; Tamb =25 °C;

see Figure 32.

VDS(A) =5V; VGG =5V; VG2-S(nom) =4V;

RG1(A) =59kΩ; fw = 50 MHz; funw = 60 MHz;

ID(nom)(A) = 19 mA; Tamb =25 °C; see Figure 32.

Fig 10. Ampliﬁer A: typical gain reduction as a function

of the AGC voltage; typical values

Fig 11. Ampliﬁer A: unwanted voltage for 1 %

cross modulation as a function of gain

reduction; typical values

VDS(A) =5V; VGG =5V; VG2-S(nom) =4V; RG1(A) =59kΩ; f = 50 MHz; ID(nom)(A) = 19 mA; Tamb =25 °C; see Figure 32.

Fig 12. Ampliﬁer A: typical drain current as a function of gain reduction; typical values

001aaf484

VAGC (V)

04

3

12

30

20

40

10

0

gain

reduction

(dB)

50

001aaf485

gain reduction (dB)

050

40

20

30

10

90

100

110

Vunw

(dB

µV)

80

001aaf486

gain reduction (dB)

050

40

20

30

10

20

30

ID

(mA)

0

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