Characteristics

STPS40M60C

2/10

Doc ID 018813 Rev 1

1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

ΔT

Table 2.

otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

30

A

Average forward current,

δ = 0.5

Per diode

Per device

20

40

A

Surge non repetitive forward current

220

A

(1)

1.

For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

Repetitive peak avalanche power

23000

W

(2)

2.

See Figure 13

Maximum repetitive peak

avalanche voltage

80

V

Storage temperature range

-65 to +175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Junction to case

per diode

1.40

°C/W

total

0.95

Coupling

0.50

°C/W

dPtot

dTj

<

1

Rth(j-a)