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CD4069UBMS データシート(PDF) 5 Page - Intersil Corporation |
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CD4069UBMS データシート(HTML) 5 Page - Intersil Corporation |
5 / 8 page 468 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Specifications CD4069UBMS Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11 Subgroup B-6 Sample 5005 1, 7, 9 Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS MIL-STD-883 METHOD TEST READ AND RECORD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS FUNCTION OPEN GROUND VDD 9V ± -0.5V OSCILLATOR 50kHz 25kHz Static Burn-In 1 (Note 1) 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 13 14 Static Burn-In 2 (Note 1) 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 Dynamic Burn-In (Note 1) - 7 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13 Irradiation (Note 2) 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V Typical Performance Characteristics FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS FIGURE 3. TYPICAL VOLTAGE TRANSFER CHARACTERIS- TICS AS A FUNCTION OF TEMPERATURE TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP MIL-STD-883 METHOD GROUP A SUBGROUPS READ AND RECORD AMBIENT TEMPERATURE (TA) = +25 oC VI VO SUPPLY VOLTAGE (VDD) = 15V 10V 5V 15.0 12.5 10.0 7.5 5.0 2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 INPUT VOLTAGE (VI) (V) SUPPLY VOLTAGE (VDD) = 15V 10V 5V 15.0 12.5 10.0 7.5 5.0 2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 INPUT VOLTAGE (VI) (V) 17.5 17.5 20.0 -55oC -55oC -55oC +125oC AMBIENT TEMPERATURE (TA) = +125oC |
同様の部品番号 - CD4069UBMS |
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同様の説明 - CD4069UBMS |
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