2SD1819A_15 datasheet(1/2 Pages) KEXIN

部品番号	2SD1819A

部品情報	NPN Transistors

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メーカー	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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1

Transistors

NPN Transistors

2SD1819A

■

Features

●

Low Collector-to-Emitter Saturation Voltage

●

High foward current transfer ratio hFE.

●

Complementary to 2SB1218A

1 Base

2 Emitter

3 Collector

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

60

Collector - Emitter Voltage

VCEO

50

Emitter - Base Voltage

VEBO

7

Collector Current - Continuous

IC

100

Collector Current - Pulse

ICP

200

Collector Power Dissipation

PC

150

mW

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

mA

■

Electrical Characteristics Ta = 25℃

■

Classification of hfe(1)

Type

2SD1819A-Q

2SD1819A-R

2SD1819A-S

Range

160-260

210-340

290-460

Marking

ZQ

ZR

ZS

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 2 mA， IB= 0

50

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

7

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

0.1

Collector-emitter cut-off current

ICEO

VCE= 40 V , IB= 0

10

Emitter cut-off current

IEBO

VEB= 6V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=100mA, IB=10mA

0.1

0.3

Base - emitter saturation voltage

VBE(sat) IC=100mA, IB=10mA

1.2

hFE(1)

VCE= 10V, IC= 2mA

160

460

hFE(2)

VCE= 2V, IC= 100 mA

90

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

3.5

pF

Transition frequency

fT

VCE= 10V, IE= -2 mA,f=1MHz

150

MHz

DC current gain

V

uA

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