BCW29-3_15 datasheet(2/2 Pages) KEXIN

部品番号	BCW29-3

部品情報	PNP Transistors

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Transistors

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-32

Collector- emitter breakdown voltage

VCEO

Ic= -2 mA， IB=0

-32

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

VCB= -32 V , IE=0

-100

nA

VCB= -32 V , IE=0,Tamb = 100℃

-10

uA

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-100

nA

IC=-10 mA, IB=- 0.5mA

-80

-300

IC=-50 mA, IB= -2.5mA

-150

IC=-10 mA, IB=- 0.5mA

-720

IC=-50 mA, IB= -2.5mA

-810

Base - emitter voltage

VBE

VCE= -5V, IC= -2mA

-600

-750

DC current gain

BCW29

90

BCW30

150

300

DC current gain

BCW29

120

260

BCW30

215

500

Collector capacitance

Cc

VCB=-10V,IE=Ie=0,f=1MHz

4.5

pF

Noise figure

NF

IC = −200 μA; VCE = −5 V;

RS = 2 kΩ;f = 1 kHz; B = 200 Hz

10

dB

Transition frequency

fT

VCE= -5V, IC= -10mA,f=100MHz

100

MHz

V

mV

VCE(sat)

VBE(sat)

hFE

VCE= -5V, IC= -10uA

VCE= -5V, IC= -2mA

Collector-base cut-off current

ICBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

■

Classification of hfe(2)

Type

BCW29

BCW30

Range

120-260

215-500

Marking

C1*

C2*

PNP Transistors

BCW29~BCW30 (KCW29~KCW30)

同様の部品番号 - BCW29-3_15

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