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2SA1013-O データシート(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部品番号 2SA1013-O
部品情報  PNP Transistors
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メーカー  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
ホームページ  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1013-O データシート(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1013-O Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1013
Features
High voltage
Large continuous collector current capability
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-160
Collector - Emitter Voltage
VCEO
-160
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-1
A
Collector Power Dissipation
PC
0.5
W
T hermal Resistance from Junction to Ambient
R θJA
250
/W
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-160
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-160
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-6
Collector-base cut-off current
ICBO
VCB= -150 V , IE=0
-1
Emitter cut-off current
IEBO
VEB= -6V , IC=0
-1
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB=-50mA
-1.5
Base - emitter saturation voltage
VBE(sat) IC= -500 mA, IB=- 50mA
-1.2
Base - emitter voltage
VBE
VCE= -5V, IC= -5mA
-0.75
DC current gain
hFE
VCE= -5V, IC= -200mA
60
320
Transition frequency
fT
VCE= -5V, IC= -200mA
15
MHz
V
uA
V
Classification of hfe
Type
2SA1013-R
2SA1013-O
2SA1013-Y
Range
60-120
100-200
160-320
Marking
1013R
1013O
1013Y


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