MTB090N06I3-0-UJ-G datasheet(3/8 Pages) CYSTEKEC

部品番号	MTB090N06I3-0-UJ-G

部品情報	N-Channel Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C420I3

Issued Date : 2014.07.11

Revised Date :

Page No. : 3/8

MTB090N06I3

CYStek Product Specification

Characteristics (TC=25

C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

60

-

V

VGS=0V, ID=250μA, Tj=25℃

∆BVDSS/∆Tj

-

0.07

-

V/

C

Reference to 25

C, ID=250μA

VGS(th)

1.0

1.6

2.2

V

VDS = VGS, ID=250μA

*GFS

-

2.2

-

S

VDS =15V, ID=1A

IGSS

-

±

100

nA

VGS=±20V

IDSS

-

1

μA

VDS =60V, VGS =0V

-

10

VDS =48V, VGS =0V, Tj=125

C

*RDS(ON)

-

70

90

mΩ

VGS =10V, ID=3A

-

82

110

VGS =4.5V, ID=2A

Dynamic

*Qg

-

8.6

-

nC

ID=5A, VDD=30V, VGS=10V

*Qgs

-

2.1

-

*Qgd

-

2.7

-

*td(ON)

-

3

-

ns

VDD=30V, ID=1A, VGS=10V, RG=6Ω

*tr

-

17

-

*td(OFF)

-

13

-

*tf

-

12

-

Ciss

-

511

-

pF

VGS=0V, VDS=25V, f=1MHz

Coss

-

22

-

Crss

-

19

-

Source-Drain Diode

*IS

-

5

A

*ISM

-

30

*VSD

-

0.86

1.2

V

IS=5A, VGS=0V

*trr

-

9

-

ns

VGS=0, IF=5A, dI/dt=100A/μs

*Qrr

-

5

-

nC

*Pulse Test : Pulse Width

300μs, Duty Cycle2%

同様の部品番号 - MTB090N06I3-0-UJ-G

メーカー	部品番号	データシート	部品情報
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