MTBA6C15J4-0-T3-G datasheet(2/13 Pages) CYSTEKEC

部品番号	MTBA6C15J4-0-T3-G

部品情報	N P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.

Spec. No. : C938J4

Issued Date : 2014.10.15

Revised Date : 2014.10.28

Page No. : 2/13

MTBA6C15J4

CYStek Product Specification

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

4

Thermal Resistance, Junction-to-ambient, max (Note2)

62.5

Thermal Resistance, Junction-to-ambient, max (Note4)

Rth,j-a

90

°C/W

Note : 1

.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2

. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air

environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction

temperature of 150°C. The value in any given application depends on the user’s specific board design.

3

. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency

and low duty cycles to keep initial TJ=25°C.

4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.

N-CH Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

150

-

VGS=0V, ID=250μA

VGS(th)

1.2

-

2.4

V

VDS =VGS, ID=250μA

GFS *1

-

8

-

S

VDS =10V, ID=2.5A

IGSS

-

±

100

nA

VGS=±20V, VDS=0V

-

1

VDS =120V, VGS =0V

IDSS

-

25

μA

VDS =120V, VGS =0V, Tj=125

°C

-

167

225

VGS =10V, ID=2.5A

RDS(ON) *1

-

172

235

mΩ

VGS =4.5V, ID=2A

Dynamic

Qg *1

-

13.4

-

Qgs *1

-

1.6

-

Qgd *1

-

3.6

-

nC

ID=2.5A, VDS=120V, VGS=10V

td(ON) *1

-

6.4

-

tr

*1

-

16.2

-

td(OFF) *1

-

62.2

-

tf *1

-

64.4

-

ns

VDS=75V, ID=1A, VGS=10V, RG=6Ω

Ciss

-

527

-

Coss

-

40

-

Crss

-

20

-

pF

VGS=0V, VDS=25V, f=1MHz

Source-Drain Diode

IS *1

-

2.3

ISM *2

-

9.2

A

VSD *1

-

0.8

1.3

V

IS=3A, VGS=0V

trr *1

-

33

-

ns

Qrr *1

-

57

-

nC

IF=3A, VGS=0V, dIF/dt=100A/μs

Note : *1.Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

*2.Pulse width limited by maximum junction temperature.

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