IRF7413 datasheet(2/6 Pages) KEXIN

部品番号	IRF7413

部品情報	N-Channel MOSFET

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MOSFET

N-Channel MOSFET

IRF7413 (KRF7413)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

30

V

VDS=24V, VGS=0V

1

VDS=24V, VGS=0V, TJ=125℃

25

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

1

3

V

VGS=10V, ID=7.2A

*1

11

VGS=4.5V, ID=6A

18

Forward Transconductance

gFS

VDS=10V, ID=7.2A

16

S

Input Capacitance

Ciss

1670

Output Capacitance

Coss

670

Reverse Transfer Capacitance

Crss

100

VGS=0V, VDS=1V, f=1MHz

2290

VGS=0V, VDS=24V, f=1MHz

680

Effective Output Capacitance

Coss eff VGS=0V, VDS=0 to 24V

1020

Total Gate Charge

Qg

44

66

Gate Source Charge

Qgs

7.9

Gate Drain Charge

Qgd

9.2

Turn-On DelayTime

td(on)

8.8

Turn-On Rise Time

tr

8

Turn-Off DelayTime

td(off)

35

Turn-Off Fall Time

tf

14

Body Diode Reverse Recovery Time

trr

50

75

Body Diode Reverse Recovery Charge

Qrr

74

110

nC

Maximum Body-Diode Continuous Current

IS

*2

3.1

Pulsed Source Current

ISM

96

Diode Forward Voltage

VSD

IS=7.2A,VGS=0V,TJ = 25℃ *1

1

V

IF= 7.2A, dI/dt= 100A/μs, TJ = 25℃ *1

A

ns

Zero Gate Voltage Drain Current

IDSS

μ

A

mΩ

VGS=10V, VDS=10 V, ID=7.2A,

RG=6.2Ω

*1

RDS(On)

Static Drain-Source On-Resistance

Output Capacitance

Coss

VGS=0V, VDS=25V, f=1MHz

VGS=10V, VDS=24V, ID=7.2A

nC

pF

*1: Pulse width ≤ 300μs; duty cycle ≤ 2%.

*2: MOSFET symbol showing the integral reverse p-n junction diode.

同様の部品番号 - IRF7413

メーカー	部品番号	データシート	部品情報
International Rectifier	IRF7413	123Kb / 8P	Power MOSFET(Vdss=30V, Id=12A)
Guangdong Youtai Semico...	IRF7413	422Kb / 8P	Generation VTechnology
International Rectifier	IRF7413A	116Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
	IRF7413GPBF	264Kb / 9P	Ultra Low On-Resistance
	IRF7413GTRPBF	264Kb / 9P	Generation V Technology

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同様の説明 - IRF7413

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