2SJ603-ZJ datasheet(1/5 Pages) KEXIN

部品番号	2SJ603-ZJ

部品情報	P-Channel MOSFET

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メーカー	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

P-Channel MOSFET

2SJ603-ZJ

■

Features

●

VDS (V) =-60V

●

ID =-25A

●

RDS(ON) ＜ 48mΩ (VGS =-10V)

●

RDS(ON) ＜ 75mΩ (VGS =-4V)

●

Low Ciss: Ciss = 1900 pF (TYP.)

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-60

Gate-Source Voltage

VGS

±

20

Continuous Drain Current

ID

-25

Pulsed Drain Current (Note.1)

IDM

-70

Single Avalanche Current (Note.2)

IAS

-25

50

1.5

Single Avalanche Energy

(Note.2)

EAS

62.5

mJ

Junction Temperature

TJ

150

Junction Storage Temperature Range

Tstg

-55 to 150

℃

V

Power Dissipation

PD

W

A

Note.1: PW ≤ 10us,Duty Cycle ≤ 1%

Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0

Tc = 25℃

Ta = 25℃

同様の部品番号 - 2SJ603-ZJ

メーカー	部品番号	データシート	部品情報
NEC	2SJ603-ZJ	79Kb / 8P	MOS FIELD EFFECT TRANSISTOR
Renesas Technology Corp	2SJ603-ZJ	215Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2001

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