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IRFD1Z1 データシート(PDF) 2 Page - Intersil Corporation |
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IRFD1Z1 データシート(HTML) 2 Page - Intersil Corporation |
2 / 6 page 5-2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFD1Z0 IRFD1Z1 IRFD1Z2 IRFD1Z3 UNITS Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 60 100 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .VDGR 100 60 100 60 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 0.5 0.5 0.4 0.4 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 4.0 4.0 3.2 3.2 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD 1.0 1.0 1.0 1.0 W Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . 0.008 0.008 0.008 0.008 W/oC Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (See Figure 9) IRFD1Z0, IRFD1Z2 100 - - V IRFD1Z1, IRFD1Z3 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (See Figure 6) IRFD1Z0, IRFD1Z1 0.5 - - A IRFD1Z2, IRFD1Z3 0.4 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 0.25A, VGS = 10V (See Figures 7, 8) IRFD1Z0, IRFD1Z1 - 2.2 2.4 Ω IRFD1Z2, IRFD1Z3 - 2.8 3.2 Ω Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 0.25A 0.25 0.35 - S Turn-On Delay Time td(ON) VDD ≅ 0.5 x Rated BVDSS, ID = 0.25A, RG = 50Ω (Figures 14, 15, 16) RL = 198Ω for BVDSS = 100V RL = 118Ω for BVDSS = 60V MOSFET Switching Times are Essentially Inde- pendent of Operating Temperature -10 20 ns Rise Time tr -15 25 ns Turn-Off Delay Time td(OFF) -15 25 ns Fall Time tf -10 20 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 1.2A, VDS = 0.8 x Rated BVDSS (Figures 13, 16, 17) Gate Charge is Essentially Independent of Operating Temperature - 2.0 3.0 nC Gate to Source Charge Qgs - 1.0 - nC Gate to Drain “Miller” Charge Qgd - 1.0 - nC Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) -50 - pF Output Capacitance COSS -20 - pF Reverse Transfer Capacitance CRSS -5 - pF IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 |
同様の部品番号 - IRFD1Z1 |
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同様の説明 - IRFD1Z1 |
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