2SD2114_15 datasheet(1/3 Pages) SECOS

部品番号	2SD2114

部品情報	NPN Plastic-Encapsulate Transistor

Download	3 Pages

Scroll/Zoom	100%

メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

Logo

1 / 3 page

Elektronische Bauelemente

2SD2114

0.5A , 25V

NPN Plastic-Encapsulate Transistor

27-Nov-2012 Rev. C

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE



High DC Current Gain.



High Emitter-Base Voltage. VEBO=12V (Min.)

CLASSIFICATION OF hFE

Product-Rank

2SD2114-V

Range

820~1800

Marking

BBV

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

25

V

Collector to Emitter Voltage

VCEO

20

V

Emitter to Base Voltage

VEBO

12

V

Collector Current - Continuous

IC

500

mA

Collector Power Dissipation

PC

250

mW

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

V(BR)CBO

25

-

V

IC=10μA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

20

-

V

IC=1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

12

-

V

IE=10μA, IC=0

Collector Cut-Off Current

ICBO

-

0.5

μA

VCB=20V, IE=0

Emitter Cut-Off Current

IEBO

-

0.5

μA

VEB=10V, IC=0

DC Current Gain

hFE

820

-

1800

VCE=3V, IC=10mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.4

V

IC=500mA, IB=20mA

Transition Frequency

fT

-

350

-

MHz

VCE=10V, IC=50mA, f=100MHz

Collector Output Capacitance

Cob

-

8

-

pF

VCB=10V, IE=0, f=1MHz

On Resistance

R(on)

-

0.8

-

Ω

Vin=0.1V(rms), IB=1mA, f=1KHz

SOT-23

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.80

3.04

G

0.09

0.18

B

2.10

2.55

H

0.45

0.60

C

1.20

1.40

J

0.08

0.177

D

0.89

1.15

K

0.6 REF.

E

1.78

2.04

L

0.89

1.02

F

0.30

0.50

同様の部品番号 - 2SD2114_15

メーカー	部品番号	データシート	部品情報
SeCoS Halbleitertechnol...	2SD2114	256Kb / 3P	NPN Plastic-Encapsulate Transistor

More results

同様の説明 - 2SD2114_15

メーカー	部品番号	データシート	部品情報
SeCoS Halbleitertechnol...	2SD2142	218Kb / 2P	NPN Plastic Plastic-Encapsulate Transistor
	2SD2142	335Kb / 2P	NPN Plastic-Encapsulate Transistor
	2SD601A	58Kb / 1P	NPN Plastic-Encapsulate Transistor
	2SC2859	526Kb / 2P	NPN Plastic-Encapsulate Transistor
	2SC2883	370Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SC4215	195Kb / 3P	NPN Plastic-Encapsulate Transistor
	BCP3669	191Kb / 2P	NPN Plastic-Encapsulate Transistor
	BC817W	240Kb / 2P	NPN Plastic Encapsulate Transistor
	M8050T	64Kb / 1P	NPN Plastic Encapsulate Transistor
Weitron Technology	2SD2098	111Kb / 5P	NPN Plastic-Encapsulate Transistor