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SI2301BDS-3 データシート(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2301BDS-3 データシート(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -20 V VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±8V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.4 -0.95 5 V VGS=-4.5V, ID=-2.8A 80 100 VGS=-2.5V, ID=-2.0A 110 150 VGS=-4.5V, VDS ≤ -5V -6 A VGS=-2.5V, VDS ≤ -5V -3 Forward Transconductance *1 gFS VDS=-5V, ID=-2.8A 6.5 S Input Capacitance *2 Ciss 375 Output Capacitance *2 Coss 95 Reverse Transfer Capacitance *2 Crss 65 Total Gate Charge *2 Qg 4.5 10 Gate Source Charge *2 Qgs 0.7 Gate Drain Charge *2 Qgd 1.1 Turn-On DelayTime *3 td(on) 20 30 Turn-On Rise Time *3 tr 40 60 Turn-Off DelayTime *3 td(off) 30 45 Turn-Off Fall Time *3 tf 20 30 5 sec -0.72 Steady State -0.6 Diode Forward Voltage VSD IS=-0.75A,VGS=0V -0.8 -1.2 V A VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω ID=-1.0A Maximum Body-Diode Continuous Current IS pF nC On state drain current *1 ID(ON) ns Zero Gate Voltage Drain Current IDSS μ A mΩ RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-6V, f=1MHz VGS=-4.5V, VDS=-6V, ID=-2.8A *1 Pulse test: PW ≤ 300us duty cycle ≤ 2%. *2 For DESIGN AID ONLY, not subject to production testing. *3 Switching time is essentially independent of operating temperature. ■ Marking Marking L1* |
同様の部品番号 - SI2301BDS-3 |
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同様の説明 - SI2301BDS-3 |
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