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SI2301BDS-3 データシート(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

部品番号 SI2301BDS-3
部品情報  P-Channel Enhancement MOSFET
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メーカー  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
ホームページ  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2301BDS-3 データシート(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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MOSFET
P-Channel Enhancement MOSFET
SI2301BDS (KI2301BDS)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=-250μA, VGS=0V
-20
V
VDS=-20V, VGS=0V
-1
VDS=-20V, VGS=0V, TJ=55℃
-10
Gate-Body leakage current
IGSS
VDS=0V, VGS=±8V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250μA
-0.4
-0.95
5
V
VGS=-4.5V, ID=-2.8A
80
100
VGS=-2.5V, ID=-2.0A
110
150
VGS=-4.5V, VDS ≤ -5V
-6
A
VGS=-2.5V, VDS ≤ -5V
-3
Forward Transconductance *1
gFS
VDS=-5V, ID=-2.8A
6.5
S
Input Capacitance *2
Ciss
375
Output Capacitance *2
Coss
95
Reverse Transfer Capacitance *2
Crss
65
Total Gate Charge *2
Qg
4.5
10
Gate Source Charge *2
Qgs
0.7
Gate Drain Charge *2
Qgd
1.1
Turn-On DelayTime *3
td(on)
20
30
Turn-On Rise Time *3
tr
40
60
Turn-Off DelayTime *3
td(off)
30
45
Turn-Off Fall Time *3
tf
20
30
5 sec
-0.72
Steady State
-0.6
Diode Forward Voltage
VSD
IS=-0.75A,VGS=0V
-0.8
-1.2
V
A
VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω
ID=-1.0A
Maximum Body-Diode Continuous Current
IS
pF
nC
On state drain current *1
ID(ON)
ns
Zero Gate Voltage Drain Current
IDSS
μ
A
RDS(On)
Static Drain-Source On-Resistance
VGS=0V, VDS=-6V, f=1MHz
VGS=-4.5V, VDS=-6V, ID=-2.8A
*1 Pulse test: PW ≤ 300us duty cycle ≤ 2%.
*2 For DESIGN AID ONLY, not subject to production testing.
*3 Switching time is essentially independent of operating temperature.
Marking
Marking
L1*


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