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SI2303DS-HF-3 データシート(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2303DS-HF-3 データシート(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 4 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1.0 -3.0 V VGS=-10V, ID=-1.7A 200 VGS=-4.5V, ID=-1.3A 380 On state drain current *1 ID(ON) VGS=-10V, VDS≥-5V -6 A Forward Transconductance *1 gFS VDS=-10V, ID=-1.7A 2.4 S Input Capacitance *2 Ciss 226 Output Capacitance *2 Coss 87 Reverse Transfer Capacitance *2 Crss 19 Total Gate Charge *2 Qg 5.8 10 Gate Source Charge *2 Qgs 0.8 Gate Drain Charge *2 Qgd 1.5 Turn-On DelayTime *3 td(on) 20 20 20 35 9.0 9.0 Turn-On Rise Time *3 tr Turn-Off DelayTime *3 td(off) 18 Turn-Off Fall Time *3 tf 6.0 Maximum Body-Diode Continuous Current IS -1.25 A Diode Forward Voltage VSD IS=-1.25A,VGS=0V -0.8 -1.2 V VGS=0V, VDS=-15V, f=1MHz VGS=-10V, VDS=-4.5V, ID=-1.7A VGS=-10V, VDS=-15V, RL=15Ω,RGEN=6Ω ID=-1.0A pF nC ns Zero Gate Voltage Drain Current IDSS μ A mΩ RDS(On) Static Drain-Source On-Resistance *1 *1 Pulse test: PW ≤ 300us duty cycle≤ 2%. *2 For DESIGN AID ONLY, not subject to production testing. *3 Switching time is essentially independent of operating temperature. ■ Marking Marking A3* F P-Channel MOSFET SI2303DS-HF (KI2303DS-HF) |
同様の部品番号 - SI2303DS-HF-3 |
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同様の説明 - SI2303DS-HF-3 |
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