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SI3475DV-HF データシート(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI3475DV-HF データシート(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -200 V VDS=-200V, VGS=0V -1 VDS=-200V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -2 -4 V VGS=-10V, ID=-0.9A 1.61 VGS=-6V, ID=-0.7A 1.65 On state drain current ID(ON) VGS=-10V, VDS≥-10V -2 A Forward Transconductance gFS VDS=-10V, ID=-0.9A 3.5 S Input Capacitance Ciss 500 Output Capacitance Coss 26 Reverse Transfer Capacitance Crss 18 Gate resistance Rg f=1MHz 9 14 Ω VGS=-10V, VDS=-100V, ID=-1A 11.7 18 7.8 12 Gate Source Charge Qgs 2 Gate Drain Charge Qgd 3.7 Turn-On DelayTime td(on) 9 14 Turn-On Rise Time tr 11 18 Turn-Off DelayTime td(off) 28 42 Turn-Off Fall Time tf 12 18 Turn-On DelayTime td(on) 14 21 Turn-On Rise Time tr 29 44 Turn-Off DelayTime td(off) 23 35 Turn-Off Fall Time tf 14 21 Body Diode Reverse Recovery Time trr 84 130 Body Diode Reverse Recovery Charge Qrr 235 350 nC Reverse Recovery Fall Time ta 46 Reverse Recovery Rise Time tb 38 Maximum Body-Diode Continuous Current IS TC = 25 °C -0.95 Pulse Diode Forward Current ISM -3 Diode Forward Voltage VSD IS=-1A,VGS=0V -1.2 V nC VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω IF=-1.2A, dI/dt=100A/μs,TJ = 25℃ A VGS=0V, VDS=-50V, f=1MHz VGS=-6V, VDS=-100V, ID=-1A Total Gate Charge Qg pF ns Zero Gate Voltage Drain Current IDSS μ A Ω VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω RDS(On) Static Drain-Source On-Resistance ■ Marking Marking AI*** F nS P-Channel MOSFET SI3475DV-HF (KI3475DV-HF) |
同様の部品番号 - SI3475DV-HF |
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同様の説明 - SI3475DV-HF |
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