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2SC2714 データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2714 データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page 2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 14-Mar-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.)(f=100MHz) CLASSIFICATION OF hFE Product-Rank 2SC2714-R 2SC2714-O 2SC2714-Y Range 40~80 70~140 100~200 Marking QR QO QY PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 20 mA Collector Power Dissipation PC 100 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=10μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=10μA, IC=0 Collector Cut-Off Current ICBO - - 0.5 μA VCB=18V, IE=0 Emitter Cut-Off Current IEBO - - 0.5 μA VEB=4V, IC=0 DC Current Gain hFE 40 - 200 VCE=6V, IC=1mA Transition Frequency fT - 550 - MHz VCE=6V, IC=1mA Reverse Transfer Capacitance Cre - 0.7 - pF VCB=6V, IE=0, f=1MHz Noise Figure NF - 2.5 5 dB VCE=6V, IC=1mA, f=100MHz SOT-23 Top View A L C B D G H J F K E 1 2 3 1 2 3 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 |
同様の部品番号 - 2SC2714_15 |
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同様の説明 - 2SC2714_15 |
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