2SC2714_15 datasheet(1/3 Pages) SECOS

部品番号	2SC2714

部品情報	NPN Plastic-Encapsulate Transistor

Download	3 Pages

Scroll/Zoom	100%

メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

Logo

1 / 3 page

2SC2714

0.02A , 40V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

14-Mar-2011 Rev. A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Small reverse Transfer Capacitance：Cre=0.7pF(typ.)



Low Noise Figure：NF=2.5dB(typ.)(f=100MHz)

CLASSIFICATION OF hFE

Product-Rank

2SC2714-R

2SC2714-O

2SC2714-Y

Range

40~80

70~140

100~200

Marking

QR

QO

QY

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOT-23

3K

7’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

4

V

Collector Current - Continuous

IC

20

mA

Collector Power Dissipation

PC

100

mW

Junction, Storage Temperature

TJ, TSTG

125, -55~125

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

40

-

V

IC=10μA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

30

-

V

IC=1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

4

-

V

IE=10μA, IC=0

Collector Cut-Off Current

ICBO

-

0.5

μA

VCB=18V, IE=0

Emitter Cut-Off Current

IEBO

-

0.5

μA

VEB=4V, IC=0

DC Current Gain

hFE

40

-

200

VCE=6V, IC=1mA

Transition Frequency

fT

-

550

-

MHz

VCE=6V, IC=1mA

Reverse Transfer Capacitance

Cre

-

0.7

-

pF

VCB=6V, IE=0, f=1MHz

Noise Figure

NF

-

2.5

5

dB

VCE=6V, IC=1mA, f=100MHz

SOT-23

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.80

3.04

G

0.09

0.18

B

2.10

2.55

H

0.45

0.60

C

1.20

1.40

J

0.08

0.177

D

0.89

1.15

K

0.6 REF.

E

1.78

2.04

L

0.89

1.02

F

0.30

0.50

同様の部品番号 - 2SC2714_15

メーカー	部品番号	データシート	部品情報
Galaxy Semi-Conductor H...	2SC2714	155Kb / 3P	Silicon Epitaxial Planar Transistor

More results

同様の説明 - 2SC2714_15

メーカー	部品番号	データシート	部品情報
SeCoS Halbleitertechnol...	2SD2142	218Kb / 2P	NPN Plastic Plastic-Encapsulate Transistor
	2SD2114	413Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SD2142	335Kb / 2P	NPN Plastic-Encapsulate Transistor
	2SD601A	58Kb / 1P	NPN Plastic-Encapsulate Transistor
	2SC2859	526Kb / 2P	NPN Plastic-Encapsulate Transistor
	2SC2883	370Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SC4215	195Kb / 3P	NPN Plastic-Encapsulate Transistor
	BCP3669	191Kb / 2P	NPN Plastic-Encapsulate Transistor
	BC817W	240Kb / 2P	NPN Plastic Encapsulate Transistor
	M8050T	64Kb / 1P	NPN Plastic Encapsulate Transistor
Weitron Technology	2SD2098	111Kb / 5P	NPN Plastic-Encapsulate Transistor