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SI5513CD データシート(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI5513CD データシート(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 6 page SMD Type www.kexin.com.cn 2 MOSFET Complementary Enhancement MOSFET SI5513CD (KI5513CD) Parameter Symbol Test Conditions Type Min Typ Max Unit ID=250μA, VGS=0V N-CH 20 ID=-250μA, VGS=0V P-CH -20 VDS=20V, VGS=0V N-CH 300 VDS=-20V, VGS=0V P-CH -300 VDS=0V, VGS=±12V N-CH ± 100 VDS=0V, VGS=±12V P-CH ± 100 VDS=VGS , ID=250μA N-CH 0.62 0.75 1.0 VDS=VGS, ID=-250μA P-CH -0.5 VGS=4.5V, ID=3.5A 25 35 VGS=2.5V, ID=2.5A 34 50 VGS=1.8V, ID=2A 64 90 VGS=-4.5V, ID=-2.8A 80 85 VGS=-2.5V, ID=-2A 95 115 VGS=-1.8V, ID=-2A 117 150 VDS=5V, ID=3A N-CH 16 VDS=-5V, ID=-2.5A P-CH 13 N-CH 522.3 N-Channel: P-CH 589 VGS=8V, VDS=0V, f=1MHz N-CH 98.48 P-Channel: P-CH 91.18 VGS=0V, VDS=-10V, f=1MHz N-CH 74.69 P-CH 67.18 N-CH 6.24 8.11 N-Channel: P-CH 6.55 8.52 VGS=4.5V, VDS=10V, ID=4A N-CH 1.64 2.13 P-Channel: P-CH 0.31 0.4 VGS=-4.5V, VDS=-6V, ID=-2.5A N-CH 1.34 1.74 P-CH 1.3 1.69 N-CH 10.4 20.8 N-Channel: P-CH 9.72 19.44 VGS=4.5V, VDS=10V, ID=1A, RGEN=6Ω N-CH 4.4 8.8 P-CH 3.56 7.12 P-Channel: N-CH 27.38 54.72 VGS=-4.5V, VDS=-6V, ID=-1A, RGEN=6Ω P-CH 33.32 66.64 N-CH 4.16 8.32 P-CH 4.52 9.04 N-CH 1.7 P-CH -1.6 IS=1.7A,VGS=0V N-CH 0.74 1.0 IS=-1.6A,VGS=0V P-CH 0.6 -0.8 -1.2 V Reverse Transfer Capacitance Turn-On DelayTime Turn-Off Fall Time Forward Transconductance Total Gate Charge Gate Source Charge Gate Drain Charge Input Capacitance Output Capacitance Gate Threshold Voltage VGS(th) V N-CH RDS(On) Static Drain-Source On-Resistance mΩ P-CH tf td(on) tr td(off) Drain-Source Breakdown Voltage VDSS V Gate-Body Leakage Current IGSS nA Zero Gate Voltage Drain Current IDSS n A Crss S pF nC Qg Qgs Qgd gFS Ciss Coss A ns Turn-On Rise Time Turn-Off DelayTime Maximum Body-Diode Continuous Current Diode Forward Voltage VSD IS ■ Electrical Characteristics Ta = 25℃ |
同様の部品番号 - SI5513CD |
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同様の説明 - SI5513CD |
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