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2SK3000 データシート(PDF) 2 Page - Renesas Technology Corp |
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2SK3000 データシート(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SK3000 R07DS1134EJ0400 Rev.4.00 Page 2 of 7 Jan 10, 2014 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 40 — 60 V ID = 100 μA, VGS = 0 Drain to source voltage VDS(SUS) 40 — — V L = 100 μH, ID = 3 A Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±100 μA, VDS = 0 Zero gate voltage drain current IDSS — — 1.0 μA VDS = 40 V, VGS = 0 Gate to source leak current IGSS — — ±5 μA VGS = ±6.5V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.1 — 2.1 V ID = 10 μA, VDS = 5 V Forward transfer admittance |yfs| 0.5 1.2 — S ID = 450 mA, VDS = 10 V Note3 Static drain to source on state resistance RDS(on) — 0.24 0.5 Ω ID = 450 mA, VGS = 4V Note3 RDS(on) — 0.16 0.3 Ω ID = 450 mA, VGS = 10 V Note3 Input capacitance Ciss — 14.0 — pF VDS = 10 V VGS = 0 f = 1 MHz Output capacitance Coss — 68 — pF Reverse transfer capacitance Crss — 3.0 — pF Turn-on delay time td(on) — 0.12 — μs VGS = 4 V, ID = 450 mA RL = 22 Ω Rise time tr — 0.6 — μs Turn-off delay time td(off) — 1.7 — μs Fall time tf — 1.4 — μs Notes: 3. Pulse test |
同様の部品番号 - 2SK3000_15 |
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同様の説明 - 2SK3000_15 |
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